The quest for the ultimate memory device for computing may have just taken an encouraging step forward. Researchers at The City College of New York led by chemist Stephen O'Brien have discovered new complex oxides that exhibit both magnetic and ferroelectric properties.
The quest for the ultimate memory device for computing may have just taken an encouraging step forward. Researchers at The City College of New York led by chemist Stephen O'Brien have discovered new complex oxides that exhibit both magnetic and ferroelectric properties.
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