A team of scientists from Arizona State University's School of Molecular Sciences and Germany have published in Science Advances online today an explanation of how a particular phase-change memory (PCM) material can work one thousand times faster than current flash computer memory, while being significantly more durable with respect to the number of daily read-writes.
A team of scientists from Arizona State University's School of Molecular Sciences and Germany have published in Science Advances online today an explanation of how a particular phase-change memory (PCM) material can work one thousand times faster than current flash computer memory, while being significantly more durable with respect to the number of daily read-writes.
Share this Article
Recommended