Get ready for SiC-GaN combo power transistors

Researchers in Sweden have come up with a way of putting gallium-nitride transistor structures on a silicon-carbide substrate that potentially lowers the ON resistance of power FETs by an order of magnitude below that of commercial devices available now. The scientists hail from Sweden’s Linköping University and SweGaN, a spin-off company from materials science research […] The post Get ready for SiC-GaN combo power transistors appeared first on Electrical Engineering News and Products.