Sign In
to Vote &
Create Storyboards.
 

FETs in DFN 8--8 format boast low RDS(on) of 34mΩ and 45mΩ

Medical Design Technology - 6 Feb 2020 18:04
FETs in DFN 8--8 format boast low RDS(on) of 34mΩ and 45mΩ UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […] The post FETs in DFN 8--8 format boast low RDS(on) of 34mΩ and 45mΩ appeared first on Elec...
1
0
0


Storyboard
Print
Share this Article

Recommended

  • {TITLE}
    {PUBLISHER} - {PUBLISHED_DATE}
    {VIEWS}
  • Create Storyboard