Reliable, High-speed MTJ Technology for 1X nm STT-MRAM and NV-Logic Has Wide Applications

(Tohoku University) Professor Tetsuo Endoh, leading a group of researchers at Tohoku University, has announced the development of an MTJ (Magnetic Tunnel Junction) with 10 ns high-speed write operation, sufficient endurance (>1011), and with highly reliable data retention over 10 years at 1X nm size. Realizing a 1X nm STT-MRAM (Spin Transfer Torque-Magnetoresistive Random Access Memory) and NV(Non-Volatile)-Logic has wide application to a variety of fields.