Switching of K-Q intervalley trions fine structure and their dynamics in n-doped monolayer WS2

Drawing on the research idea of electron spin degree of freedom, the valley degree of freedom can be used as an information carrier to design and realize related functional devices. Monolayer group VI transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for photonic and opto-valleytronic applications due to their excellent photoelectric properties and peculiar energy valley structure.