Wafer-scale 2D MoTe₂ layers enable highly-sensitive broadband integrated infrared detectors

Detection in multiple infrared (IR) regions spanning from short- and mid- to long-wave IR plays an important role in diverse fields from scientific research to wide-ranging technological applications, including target identification, imaging, remote monitoring, and gas sensing. Currently, state-of-the-art IR photodetectors are mainly dominated by conventional narrow bandgap semiconductors including In1-xGaxAs, InSb, and Hg1-xCdxTe, operating in short-wave IR (SWIR, 1-3 µm), mid-wave IR (MWIR, 3...