Towards high quality transferred barium titanate ferroelectric hybrid integrated modulator on silicon

Future optical communication and signal processing systems will require high-volume optical links, wherein photonic integrated devices play a key role. Si photonics is currently among the most advanced techniques for realizing low-cost PIC. However, despite their enormous potential, there remain basic restraints on light modulation in SOI waveguides. The absence of a linear EO coefficient is challenging because of the crystal structure of Si.