New theory clarifies why tunnel magnetoresistance oscillates with barrier thickness

Researchers have developed a new theory that explains why tunnel magnetoresistance (TMR)--used in magnetic memory and other technologies--oscillates with changes in the thickness of the insulating barrier within a magnetic tunnel junction (MTJ). This oscillation was clearly observed when NIMS recently recorded the world's highest TMR ratio. Understanding the mechanisms behind this phenomenon is expected to significantly aid in further increasing TMR ratios.